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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1398
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
5
DESCRIPTION
The 2SK1398 is N-channel MOS Field Effect Transistor designed for a high-speed switching device in digital circuits. The 2SK1398 is driven by a 2.5-V power source, it is suitable for applications including headphone stereos which need power saving.
ORDERING INFORMATION
PART NUMBER 2SK1398 PACKAGE SST
FEATURES
* Directly driven by ICs having a 3-V power supply. * Not necessary to consider driving current because of its high input impedance. * Possible to reduce the number of parts by omitting the bias resistor. * Can be used complementary with the 2SJ184.
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS= 0 V) Gate to Source Voltage (VDS= 0 V) Drain Current (DC) Drain Current (pulse)
Note
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
50 7.0 100 200 250 150 -55 to +150
V V mA mA mW C C
Total Power Dissipation Channel Temperature Storage Temperature Note PW 10 ms, Duty cycle 50 %
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D14772EJ2V0DS00 (2nd edition) (Previous No. TC-2342) Date Published March 2000 NS CP(K) Printed in Japan
The mark 5 shows major revised points.
(c)
1991, 2000
2SK1398
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTICS Drain Cut-off Current SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Ciss Coss Crss td(on) tr td(off) tf TEST CONDITIONS VDS = 50 V, VGS = 0 V VGS = 7.0 V, VDS = 0 V VDS = 3.0 V, ID = 1.0 A VDS = 3.0 V, ID = 10 mA VGS = 2.5 V, ID = 10 mA VGS = 4.0 V, ID = 10 mA VDS = 3.0 V VGS = 0 V f = 1 MHz VDD = 3.0 V ID = 20 mA VGS(on) = 3.0 V RG = 10 , RL = 150 0.9 20 1.2 38 22 14 8 7 3 15 100 30 35 40 20 MIN. TYP. MAX. 10 5.0 1.5 UNIT
A A
V mS pF pF pF ns ns ns ns
5
Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance
TEST CIRCUIT SWITCHING TIME
D.U.T. RL PG. RG RG = 10 VDD
ID 90 % 90 % ID 0 10 % td(on) ton tr td(off) toff 10 % tf VGS
VGS
Wave Form
0
10 %
VGS(on)
90 %
VGS 0 = 1 s Duty Cycle 1 %
ID
Wave Form
2
Data Sheet D14772EJ2V0DS00
2SK1398
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
PT - Total Power Dissipation - mW
dT - Derating Factor - %
100 80 60 40 20
300 250 200 150 100 50 0 30 60 90 120 150 180
0
20
40
60
80
100 120 140 160
TC - Case Temperature - C
TA - Ambient Temperature - C
FORWARD TRANSFER CHARACTERISTICS
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100
ID - Drain Current - mA
100
Pulsed
Pulsed
80 VGS = 4.5 V 60 40 20 VGS = 4.0 V VGS = 2.5 V
ID - Drain Current - mA
10
5
1
TA = 150 C 75 C 25 C -25 C
0.1
0
0.5
1.0
1.5
2.0
0.01 0 1 2 3 4
VDS = 3.0 V 5 6 7 VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
VGS(off) - Gate to Source Cut-off Voltage - V
VDS = 3.0 V ID = 1.0 A
| yfs | - Forward Transfer Admittance - mS
2.0
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 1000 VDS = 5.0 V f = 1 kHz
100
1.5
10
1.0
1
10
100 200
ID - Drain Current - mA
0.5
0
50
100
150
Tch - Channel Temperature - C
Data Sheet D14772EJ2V0DS00
3
2SK1398
RDS(on) - Drain to Source On-state Resistance -
30
RDS(on) - Drain to Source On-state Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 Pulsed VGS = 2.5 V
20 ID = 100 mA ID = 10 mA 10
5
10
VGS = 4.0 V
1 0.1
1
10
100
ID - Drain Current - mA
0
1
2
3
4
5
6
7
8
9
10
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance -
VGS = 2.5 V ID = 5.0 mA
RDS(on) - Drain to Source On-state Resistance -
25
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 30
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE VGS = 4.0 V ID = 5.0 mA
20
25
15
20
10 0 50 100 150 Tch - Channel Temperature - C
15
0
50
100
150
Tch - Channel Temperature - C
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
SWITCHING CHARACTERISTICS 1 000
td(on), tr, td(off), tf - Switching Time - ns
100
Ciss, Coss, Crss - Capacitance - pF
VGS = 0 V f = 1 MHz
tr 100 tf td(off) td(on) 10
10
Ciss Coss
Crss 1 1 10 VDS - Drain to Source Voltage - V 100
1 1 10
VDD = 3.0 V VGS = 3.0 V RGS = 10 1000 100
ID - Drain Current - mA
4
Data Sheet D14772EJ2V0DS00
2SK1398
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
ISD - Source to Drain Current - mA
100
Pulsed VGS = 0 V
10
1
0.1 0.5
0.6
0.7
0.8
0.9
1.0
VSD - Source to Drain Voltage - V
Data Sheet D14772EJ2V0DS00
5
2SK1398
PACKAGE DRAWING (Unit: mm)
SST
4.00.2
2.00.2
1
2
3
1.0 TYP.
0.50 TYP.
0.6 TYP.
3.00.2
EQUIVALENT CIRCUIT
Drain
0.45 TYP.
0.42 TYP.
12.5 MIN.
Gate Gate Protection Source Diode
Body Diode
Marking : G25
1.27 TYP.
1.27 TYP.
1
2
3
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
6
1.35 TYP.
1. Source 2. Drain 3. Gate
Data Sheet D14772EJ2V0DS00
2SK1398
[MEMO]
Data Sheet D14772EJ2V0DS00
7
2SK1398
* The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.
M7 98. 8

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